As it was released by Toshiba, a new high power LED with 3.5 x 3.5 package has been developed. According to Toshiba, the new product achieves a luminous efficacy of 160 Lumen per Watt at 5.000K and when driven with 350mA.

It is particularly remarkable that the GaN (Gallium Nitrid) LEDs are packaged onto silicon wafers. This is rather untypical as most manufacturers use sapphire or silicon-carbonate wafers for the packaging of GaN.  As Toshiba points out, the new GaN on-Sin solution will considerably reduce the costs of the LED-production, inevitably leading to more competitive high power LED prices on the market.

The usage of silicone substrates (GaN on-Si) until recently has not had a market-breakthrough. The main reason was a much lower luminous efficacy when GaN on-Sin was applied. However, as Toshiba emphasizes, the luminous efficacy of its Gan on-Sin solution has been constantly improved over years and is now reaching a new peak of 160 Lumen per 1 Watt.

That’s certainly not the highest luminous efficacy amongst high power LEDs, but definitely a remarkable performance at a price level which beats the prices of high power LEDs of many other manufacturers. Toshiba additionally claims that its new GaN on-Sin LED can be driven even up to 1.5A as long as the junction temperature is being kept under a temperature as high as 150 degrees Celsius. Toshiba said the new GaN on-Sin solution is distinctively superior to the luminous performance of mid-power-LED, but allows price-levels similar to mid-power LEDs.gm.